au.\*:("SUNDER, W. A")
Results 1 to 16 of 16
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Czochralski growth and characterization of GaSbSUNDER, W. A; BARNS, R. L; KOMETANI, T. Y et al.Journal of crystal growth. 1986, Vol 78, Num 1, pp 9-18, issn 0022-0248Article
Czochralski groth of single crystals of Ni3-κMnκSnLAUDISE, R. A; SUNDER, W. A; O'BRYAN, H. M et al.Journal of crystal growth. 1992, Vol 118, Num 3-4, pp 277-286, issn 0022-0248Article
Thermodynamic stability and reactivity of AlSb and their relationship to crystal growthMCAFEE, K. B. JR; GAY, D. M; HOZACK, R. S et al.Journal of crystal growth. 1988, Vol 88, Num 4, pp 488-498, issn 0022-0248Article
Raman characterization of single defect layers embedded in finite superlatticesSCHWARTZ, G. P; GUALTIERI, G. J; SUNDER, W. A et al.Applied physics letters. 1991, Vol 58, Num 9, pp 971-973, issn 0003-6951, 3 p.Article
Molecular beam epitaxy growth and characterization of GaSb/AlSb strained-layer superlattices on nonvicinal (001) and 111(B) GaSb substratesSCHWARTZ, G. P; GUALTIERI, G. J; SUNDER, W. A et al.Journal of crystal growth. 1990, Vol 102, Num 1-2, pp 147-156, issn 0022-0248, 10 p.Article
X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuityGUALTIERI, G. J; SCHWARTZ, G. P; NUZZO, R. G et al.Applied physics letters. 1986, Vol 49, Num 16, pp 1037-1039, issn 0003-6951Article
Czochralski crystal growth in the system PtMnxSb2-xLAUDISE, R. A; SUNDER, W. A; BARNS, R. L et al.Journal of crystal growth. 1990, Vol 102, Num 1-2, pp 21-30, issn 0022-0248, 10 p.Article
Critical layer thickness and strain relaxation measurements in GaSb(001)/AlSb structuresGOSSMANN, H.-J; DAVIDSON, B. A; GUALTIERI, G. J et al.Journal of applied physics. 1989, Vol 66, Num 4, pp 1687-1694, issn 0021-8979Article
Chemical reaction at the Al-GaSb interfaceSUSNOW, R. G; SCHWARTZ, G. P; GUALTIERI, G. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 4, pp 789-793, issn 0734-211XArticle
Highly textured and single crystal Bi2CaSr2Cu2Ox prepared by laser heated float zone crystallizationBRODY, H. D; HAGGERTY, J. S; CIMA, M. J et al.Journal of crystal growth. 1989, Vol 96, Num 2, pp 225-233, issn 0022-0248Article
Thermodynamic considerations in the synthesis and crystal growth of GaSbMCAFEE, K. B. JR; GAY, D. M; HOZACK, R. S et al.Journal of crystal growth. 1986, Vol 76, Num 2, pp 263-271, issn 0022-0248Article
Room-temperature operation of optically pumped InGaAsSb/AlGaAsSb double-heterostructure laser at ~2 υmDUTT, B. V; TEMKIN, H; KOLB, E. D et al.Applied physics letters. 1985, Vol 47, Num 2, pp 111-113, issn 0003-6951Article
Large electronic-density increase on cooling a layered metal : doped Bi2Te3THOMAS, G. A; RAPKINE, D. H; VAN DOVER, R. B et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 3, pp 1553-1556, issn 0163-1829Article
Solubility and P-V-T relations and the growth of potassium titanyl phosphateLAUDISE, R. A; SUNDER, W. A; BELT, R. F et al.Journal of crystal growth. 1990, Vol 102, Num 3, pp 427-433, issn 0022-0248Article
Czochralski growth of doped single crystals of Bi2Te3LAUDISE, R. A; SUNDER, W. A; BARNS, R. L et al.Journal of crystal growth. 1989, Vol 94, Num 1, pp 53-61, issn 0022-0248Article
X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity. Comment and replyLEY, L; GUALTIERI, G. J; SCHWARTZ, G. P et al.Applied physics letters. 1987, Vol 50, Num 24, pp 1763-1764, issn 0003-6951Article
